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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4163 DESCRIPTION *With TO-220F package *High breakdown voltage. *High reliability. *Fast switching speed *Wide area of safe operation APPLICATIONS *Switching regulator applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 12 25 4 40 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; RBE= IC=1mA ; IE=0 IE=1mA ; IC=0 IC=8A ;IB=1.6A IC=8A ;IB=1.6A VCB=400V; IE=0 VEB=5V; IC=0 IC=1.6A ; VCE=5V IC=8A ; VCE=5V IC=10mA ; VCE=5V IE=0; VCB=10V;f=1MHz IC=1.6A ; VCE=10V 15 10 10 160 20 MIN 400 500 7 2SC4163 TYP. MAX UNIT V V V 0.8 1.5 10 10 50 V V A A pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=10A; IB1=2A IB2=-4A VCC=200V ,RL=20 0.5 2.5 0.3 s s s hFE-1 Classifications L 15-30 M 20-40 N 30-50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4163 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4163 4 |
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